| Autor: |
Fang-Cheng Liu, Jyun-Yong Li, Tai-Hong Chen, Chun-How Chang, Ching-Ting Lee, Wei-Hua Hsiao, Day-Shan Liu |
| Předmět: |
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| Zdroj: |
Materials (1996-1944); Jul2017, Vol. 10 Issue 7, p797, 13p, 2 Charts, 8 Graphs |
| Abstrakt: |
Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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