| Autor: |
Neudeck, Philip G., Spry, David J., Chen, Liangyu, Prokop, Norman F., Krasowski, Michael J. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Aug2017, Vol. 38 Issue 8, p1082-1085, 4p |
| Abstrakt: |
Short-term demonstrations of packaged 4H-SiC junction field-effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature believed unprecedented for electrical operation of a semiconductor IC. The expanded temperature range should assist temperature acceleration testing/qualification of such ICs intended for long-term use in applications near 500 °C ambient, and perhaps spawn new applications. Ceramic package assembly leakage currents inhibited the determination of some intrinsic SiC device/circuit performance properties at these extreme temperatures, so it is conceivable that even higher operating temperatures might be obtained from SiC JFET ICs by employing packaging and circuit design intended/optimized for T $\ge800$ °C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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