| Autor: |
Smolin, Sergey Y., Choquette, Amber K., Wilks, Regan G., Gauquelin, Nicolas, Félix, Roberto, Gerlach, Dominic, Ueda, Shigenori, Krick, Alex L., Verbeeck, Johan, Bär, Marcus, Baxter, Jason B., May, Steven J. |
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| Zdroj: |
Advanced Materials Interfaces; Jul2017, Vol. 4 Issue 14, pn/a-N.PAG, 8p |
| Abstrakt: |
The electronic properties of LaFeO3/LaMnO3 epitaxial heterojunctions are investigated to determine the valence and conduction band offsets and the nominal Mn and Fe valence states at the interface. Studying a systematic series of (LaFeO3) n/(LaMnO3) m bilayers ( m ≈ 50) epitaxially grown in the (001) orientation using molecular beam epitaxy, layer-resolved electron energy loss spectroscopy reveals a lack of significant interfacial charge transfer, with a nominal 3+ valence state observed for both Mn and Fe across the interface. Through a combination of variable angle spectroscopic ellipsometry and hard X-ray photoelectron spectroscopy, type I energy level alignments are obtained at the LaFeO3/LaMnO3 interface with positive valence and conduction band offsets of (1.20 ± 0.07) eV and (0.5-0.7 ± 0.3) eV, respectively, with minimal band bending. Variable temperature resistivity measurements reveal that the bilayers remain insulating and that the presence of the heterojunction does not result in a conducting interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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