| Autor: |
Ningyi, Y., Jinhua, L., Chan, H.L.W., Chenglu, L. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; 2004, Vol. 78 Issue 5, p777-780, 4p |
| Abstrakt: |
VO[sub 2] thin films with semiconductor-to-metal phase-transition properties were prepared by inorganic sol-gel and IBED (ion-beam-enhanced deposition) methods on SiO[sub 2]/Si substrate. The crystalline phase and the shape and width of the hysteresis curves of these VO[sub 2] films were significantly different. For sol-gel VO[sub 2] films, the transition started at close to 62 °C upon heating. The temperature interval needed to complete the phase transition was 8 °C, the ratio of resistance (R[sub 20 °C]/R[sub 80 °C]) reached three orders and the hysteresis width was 6 °C. However, the IBED film post-annealed in Ar at 700 °C underwent a phase transition from 45 °C to 80 °C, the ratio of resistance was more than two orders and the hysteresis width was 2 °C. In addition, the TCR (temperature coefficient of resistance) at 22 °C of the IBED film was 3.5%/K, much larger than the 0.7%/K TCR of the sol-gel film. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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