| Autor: |
Faqir, M., Manoi, A., Mrotzek, T., Knippscheer, S., Massiot, M., Buchta, M., Blanck, H., Rochette, S., Vendier, O., Kuball, M. |
| Předmět: |
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| Zdroj: |
Journal of Microelectronic & Electronic Packaging; 2011 3rd Quarter, Vol. 8 Issue 3, p110-113, 4p |
| Abstrakt: |
Raman thermography measurements were performed on AlGaN/GaN multifinger high electron mobility transistors (HEMTs) to determine their channel temperature at various power levels. The devices were mounted on both silver diamond composite and CuW baseplates, in order to benchmark the thermal performance of novel diamond composite baseplates compared with traditional materials. We illustrate that AlGaN/GaN HEMT devices mounted on silver diamond composite baseplates show peak temperatures that are 50% lower than the peak temperatures exhibited by devices mounted on traditional CuW baseplates. This is a dramatic improvement in terms of heat extraction as a basis to enable longer device lifetimes and better performance. In addition, time-resolved Raman thermography measurements were carried out to obtain the thermal dynamics of devices on the silver-diamond baseplate and on heat diffusion during pulsed device operation. This time-dependent information is of great importance for reliability and failure analyses, as pulsed operation of a HEMT is a typical device operation condition. Finite-element thermal simulations were performed for comparison with experimental results, and good agreement with the experimental data was obtained. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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