Effect of proton irradiation on the breakdown voltage of a high-voltage p-n junction.

Autor:	Paderov, V., Silkin, D., Goryachkin, Yu., Khapugin, A., Grishanin, A.
Předmět:	BREAKDOWN voltage P-N junctions (Semiconductors) IONIZATION (Atomic physics) THYRISTORS SPACE charge
Zdroj:	Journal of Communications Technology & Electronics; Jun2017, Vol. 62 Issue 6, p616-620, 5p
Abstrakt:	The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p-n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p-n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p-n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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