Effect of thickness and sulfur-free annealing atmosphere on the structural, optical and electrical properties of CuZnSnS thin films prepared by dip-coating technique.

Autor: Phan Thi, Kieu, Anh Tuan, Dao, Huu Ke, Nguyen, Anh Le, Thi, Hung, Le
Zdroj: Journal of Sol-Gel Science & Technology; Aug2017, Vol. 83 Issue 2, p324-331, 8p
Abstrakt: CuZnSnS thin films were prepared by dip-coating technique and annealed in N atmosphere. The effect of thickness and annealing temperature on structural, optical and electrical properties of CuZnSnS thin films in the temperature range 400-540 °C were investigated. X-ray diffraction patterns corresponding to (112), (220) and (116) planes revealed that all CuZnSnS thin films exhibited kesterite structure. Additionally, tetragonal kesterite phase of CuZnSnS thin films was also confirmed with a strong 334 cm peak using Raman spectroscopy. The results of Raman spectra, X-ray diffraction patterns and UV-Vis spectra indicated that 600 nm thick CuZnSnS thin film at 450 °C showed kesterite phase and an excellent optical absorption coefficient over 10 cm in visible region. Furthermore, the effect of annealing temperature on the presence of secondary phases was also clarified. Using the CuZnSnS thin film as p-type thin film, p-CuZnSnS/n-Si (100) hetero-junction was prepared successfully with a good rectification behavior. Graphical Abstract: CZTS thin films were prepared by dip-coating technique and annealed in N atmosphere. The effect of thickness and annealing temperatures on the quality of CZTS thin films were clarified. The results showed that CZTS thin films exhibited kesterite phase and an excellent optical absorption coefficient over 10 cm in visible region. As annealing temperature increase above 450 °C, the presence of CuS secondary phase significantly affected the quality of CZTS. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
Externí odkaz: