| Autor: |
Yi-Ting Cheng, Yen-Hsun Lin, Wan-Sin Chen, Keng-Yung Lin, Hsien-Wen Wan, Chiu-Ping Cheng, Hung-Hsiang Cheng, Jueinai Kwo, Minghwei Hong, Tun-Wen Pi |
| Zdroj: |
Applied Physics Express; Jul2017, Vol. 10 Issue 7, p1-1, 1p |
| Abstrakt: |
Photoemission from an epi Ge(001)-2 × 1 surface is presented using synchrotron radiation as a probe. The topmost surface atoms are buckled with the up-dimer and down-dimer atoms exhibiting surface core-level shifts (SCLSs) of −0.492 and −0.178 eV, respectively. The subsurface layer shows a +0.083 eV SCLS. The final-state effect suffices to explain the sign of the shift. The electron affinity and ionization potential for the epi Ge surface are 4.36 and 5.09 eV, respectively. An argument contrasting the current results with those of existing reports with non-epi surfaces is also given. Non-epi surfaces possess Ge surfaces with isolated single atoms or small droplets that affect Ge’s contact with dielectric layers and the electric performances of the Ge metal–oxide–semiconductor structure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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