Electrical Performance and Reliability of Tunnel Magnetoresistance Heads for 100-Gb/in[sup2] Application.

Autor: Kuwashima, Tetsuya, Fukuda, Kazumasa, Kiyono, Hiroshi, Sato, Kazuki, Kagami, Takeo, Saruki, Syunji, Uesugi, Takumi, Kasahara, Noriaki, Ohta, Naoki, Nagai, Kentaro, Hachisuka, Nozomu, Takahashi, Norio, Naoe, Masamu, Miura, Satoshi, Barada, Kazuhiro, Kanaya, Takayasu, Inage, Kenji, Kobayashi, Atsuo
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Zdroj: IEEE Transactions on Magnetics; Jan2004 Part 2 of 2, Vol. 40 Issue 1, p176-181, 6p
Abstrakt: Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. Mow resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 Ω · μm[SUP2] and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in[SUP2] application. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index