| Autor: |
Chuan-Hui Cheng, Bi-Long Zhang, Chao Sun, Ruo-Xuan Li, Yuan Wang, Wen-Ming Tian, Chun-Yi Zhao, Sheng-Ye Jin, Wei-Feng Liu, Ying-Min Luo, Guo-Tong Du, Shu-Lin Cong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2017, Vol. 121 Issue 23, p1-5, 5p |
| Abstrakt: |
A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m². In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m² decreases from 13 to 8V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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