| Autor: |
Hiroshi Yanagi, Yusuke Koyamaishi, Chiyuki Sato, Yota Kimura |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/19/2017, Vol. 110 Issue 25, p1-3, 3p, 1 Chart, 4 Graphs |
| Abstrakt: |
Amorphous oxide semiconductors (including transparent ones) are attractive materials for nextgeneration optoelectronic applications. One of the difficulties with amorphous oxide semiconductors is the lack of high mobility (>10cm2V-1 s-1) at low carrier density (<1018cm-3). A threshold carrier density of ~1018 cm-3 is generally required to obtain a constant high mobility, although higher mobilities of ⩾30cm2V-1 s-1 have been achieved with carrier densities ranging from 8×1019 to ~1020cm-3. In the present study, we obtain mobilities of 57 cm2V-1 s-1 at 1.9×1017cm-3 and 36 cm2V-1 s-1 at 5.3×1016cm-3 in transparent amorphous Cd-Ga-Sn-O films deposited by radiofrequency magnetron sputtering with a water-vapor pressure⩾0.25 Pa. In these amorphous films, the threshold carrier density for obtaining high mobility (~10 cm2V-1 s-1) is possibly four orders of magnitude lower than that in conventional amorphous oxide semiconductors such as amorphous In-Ga-Zn-O. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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