| Autor: |
Okazaki, Kenichi, Shima, Yukinori, Kurosaki, Daisuke, Nakazawa, Yasutaka, Koezuka, Junichi, Baba, Haruyuki, Yamazaki, Shunpei |
| Předmět: |
|
| Zdroj: |
SID Symposium Digest of Technical Papers; May2017, Vol. 48 Issue 1, p1112-1115, 4p |
| Abstrakt: |
Using an active layer in which a c-axis-aligned crystalline oxide semiconductor (CAAC-OS) is stacked on a cloud-aligned composite OS (CAC-OS), we have succeeded in fabricating a channel-etched field-effect transistor (CE-FET) with a high on-state current and favorable reliability. The CE-FET with the CAAC/CAC-OS structure can be fabricated using the existing amorphous silicon facilities and processes almost as they are. Therefore, we believe that high-performance devices can be fabricated at low cost with large Gen 8-10.5 glass substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text