| Autor: |
Fávaro de Oliveira, Felipe, Antonov, Denis, Wang, Ya, Neumann, Philipp, Momenzadeh, Seyed Ali, Häußermann, Timo, Pasquarelli, Alberto, Denisenko, Andrej, Wrachtrup, Jörg |
| Zdroj: |
Nature Communications; May2017, Vol. 8 Issue 5, p15409, 1p |
| Abstrakt: |
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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