| Autor: |
Mei-Xin Feng, Qian Sun, Jian-Ping Liu, Zeng-Cheng Li, Yu Zhou, Hong-Wei Gao, Shu-Ming Zhang, Hui Yang |
| Předmět: |
|
| Zdroj: |
Materials (1996-1944); May2017, Vol. 10 Issue 5, p482, 7p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, Jmax, is nearly 40 A/cm2, which is much lower than that reported by other studies. The reported Jmax, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
