A Novel Exponential Approximation with $$\pm 0.21\,\hbox {dB}$$ Error for Realizing an Improved CMOS Exponential Function Generator.

Autor: Srivastava, Pushkar, Sharma, Ravindra
Předmět:
Zdroj: Circuits, Systems & Signal Processing; Jul2017, Vol. 36 Issue 7, p2941-2957, 17p
Abstrakt: A new modified pseudo-Taylor exponential approximation is presented for realizing a current-to-current exponential function generator. The proposed approximation for exponential function generation has been implemented using translinear principle of MOSFETs operating in weak inversion region. The SPECTRE simulation tool from Cadence, with 180 nM CMOS process parameters, has been utilized for testing the workability of the CMOS implementation of the proposed approximation, which uses only $$\pm 0.5\hbox {V}$$ power supply. The post-layout simulation results of the proposed CMOS exponential generator, thus, consume only $${\approx }119\,\hbox {nW}$$ power and produce 51.6 dB range of linear-in-dB output with only $$\pm 0.21\,\hbox {dB}$$ error while occupying an area of $$0.26\,\upmu \hbox {m}^{2}$$ . [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index