Activation energies of the InSi-Si i defect transitions obtained by carrier lifetime measurements.

Autor:	Lauer, Kevin, Möller, Christian, Teßmann, Christopher, Schulze, Dirk, Abrosimov, Nikolay V.
Předmět:	ACTIVATION energy SEMICONDUCTOR carrier lifetime measurement INDIUM SILICON ENERGY dissipation
Zdroj:	Physica Status Solidi (C); May2017, Vol. 14 Issue 5, pn/a-N.PAG, 8p
Abstrakt:	Light-induced degradation (LID) is investigated in indium doped silicon by time and temperature dependent carrier lifetime measurements. Different transitions rates and activation energies were measured and interpreted within the ASi-Si i defect model. The case of indium acceptors is compared to the case of boron. Results are discussed within the frame of a comparison between ASi-Si i and ASi-Fe i defects. It was found that reported dependencies of the transitions rates of the ASi-Si i defect on the hole density support defect models which are based on defect configuration changes. An in-depth explanation of the ASi-Si i defect model is given and possible errors related to the measurement of transition rates are discussed. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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