Effects of Sn doping on the microstructure and dielectric and ferroelectric properties of Ba(ZrTi)O ceramics.

Autor:	Fu, Xizhi, Cai, Wei, Cheng, Gang, Gao, Rongli
Předmět:	ELECTRONIC ceramics DIELECTRIC breakdown FERROELECTRIC ceramics TIN compounds DOPING agents (Chemistry) CURIE temperature SOLID state electronics CRYSTALLOGRAPHY
Zdroj:	Journal of Materials Science: Materials in Electronics; Jun2017, Vol. 28 Issue 11, p8177-8185, 9p
Abstrakt:	Ba(ZrTi)SnO ceramics are prepared via the conventional solid state reaction method. The effects of Sn doping on microstructure, dielectric and ferroelectric properties of Ba(ZrTi)SnO ceramics were investigated. These results indicate that Sn ions enter the unit cell maintaining the perovskite structure of solid solution and substitute preferentially for Zr and then Ti when Sn content ( x) gradually increases from 0 to 0.2. Introduction of Sn on B sites makes grain more uniform and regular. The addition of Sn results in the fall of the Curie temperature. The temperature dependences of dielectric properties of Ba(ZrTi)SnO ceramics indicate that the addition of stannum leads to the enhancement of the diffuseness of ferroelectric-paraelectric phase transition. Moreover, it can be found that the ferroelectric properties deteriorate as Sn content increases. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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