Enhancement and anisotropy of the Landau g factor in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures.

Autor: Zheng, Z.W., Shen, B., Gui, Y.S., Qiu, Z.J., Jiang, C.P., Tang, N., Liu, J., Chen, D.J., Zhou, H.M., zhang, R., Shi, Y., Zheng, Y.D., Guo, S.L., Chu, J.H., Hoshino, K., Arakawa, Y.
Předmět:
Zdroj: Journal of Applied Physics; 3/1/2004, Vol. 95 Issue 5, p2473-2476, 4p, 5 Graphs
Abstrakt: Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic field higher than 5.4 T and a temperature of 1.4 K. The effective g factor g[sup *] is enhanced due to the exchange interaction of the 2DEG at high densities. The ratio of the transverse effective g factor g[sub ⊥][sup *] and the longitudinal effective g factor g[sub ∥][sup *] is g[sub ⊥][sup *]/g[sub ∥][sup *]=2.6 indicating the large difference between g[sub ∥][sup *] and g[sub ⊥][sup *]. It is demonstrated that the anisotropy of the g[sup *] is due to the strong polarization-induced electric field at the heterointerface. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
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