| Autor: |
Shih, H.D., Kinch, M.A., Aqariden, F., Liao, P.K., Dreiske, P.D., Ohlson, M.J., Orent, T.W., Robinson, J.E., Schaake, H.F., Teherani, T.H., Kalma, A.H., Roush, F.M. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 2/23/2004, Vol. 84 Issue 8, p1263-1265, 3p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
Excellent high-operating-temperature infrared photodiodes in the medium-wavelength infrared spectral band with cutoff wavelengths ∼5 μm at 77 K were fabricated on Hg[sub 1-x]Cd[sub x]Te samples (x∼0.30) prepared by liquid-phase epitaxy in a tellurium-melt reactor. The samples were doped with indium to ∼1×10[sup 14] cm[sup -3] and gold to ∼5×10[sup 15] cm[sup -3]. Thick planar diodes (∼80 μm thick) and thin cylindrical diodes (∼10 μm thick) of the n-on-p type were fabricated, and they gave comparable, excellent detector dark values within a factor of two. At 130 K, dark currents as low as 5×10[sup -7] A/cm[sup 2] were obtained. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
