| Autor: |
Xiaochen Zhu, Ang J. Li, Stewart, G. R., Hebard, Arthur F. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/1/2017, Vol. 110 Issue 18, p1-5, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
The transition metal dichalcogenide 1T-TaS2 is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. Here, we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS2 in intimate van der Waals contact with n-type GaAs substrates. The extracted barrier parameters (ideality, barrier height, and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS2. The CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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