| Autor: |
Meyers, R.G., Fay, P., Schulman, J.N., Thomas III, S., Chow, D.H., Zinck, J., Boegeman, Y.K., Deelman, P. |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jan2004, Vol. 25 Issue 1, p4-6, 3p, 1 Chart, 3 Graphs |
| Abstrakt: |
Nearly lattice-matched InAs/AlSb/GaSb-based heterostructure backward diodes for zero-bias millimeter wave detection were fabricated and measured. A record-high curvature, γ = 39.1 V[sup -1], at zero bias was measured. On-wafer sensitivity measurements from 1 to 110 GHz gave a record-high average sensitivity of 3687 V/W for zero-bias operation. Further enhancement of detector sensitivity was observed with applied dc bias, with a sensitivity of 7996 V/W obtained for a 0.9 µA bias. Extrapolating the conjugately-matched measured sensitivity suggests that 1000 V/W should be achievable at a record-high 541 GHz. The temperature dependence of detector sensitivity was evaluated from measured dc current-voltage characteristics and gave expected sensitivities ranging from 3910 V/W at 293 K to 7740 V/W at 4.2 K. Index Terms—Backward diodes; millimeter-wave detectors; millimeter-wave diodes; semiconductor heterojunctions; tunnel diodes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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