| Autor: |
Hunter, Bradford L., Matthews, Wallace E. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Apr2017, Vol. 64 Issue 4, p777-786, 10p |
| Abstrakt: |
A precision bandgap reference has been developed in a 0.18~\mu \text m BiCMOS process that achieves ±3 ppm/°C temperature drift at ±3 $\sigma $ from −40 °C to 110 °C. The reference is designed to utilize single temperature trim and standard components. A 3.65 V switched capacitor reference voltage is provided to a $2^{{\textrm {nd}}} order delta-sigma modulator ADC to digitize a battery cell voltage. The switched capacitor reference utilizes fully differential sampling which reduces the errors from channel charge injection and clock feedthrough introduced by pseudo-differential sampling. A new technique for sampling a \text V{\textrm {be}} voltage directly onto the output of the reference’s differential amplifier has been developed that removes the error that would be introduced from differentially sampling the \text V{\textrm {be}} and the \Delta \text V{\textrm {be}} voltage terms independently. The bandgap reference and ADC combination have an input referred noise spectral density of 4.7~\mu \text V/\surd Hz from 0.1 to 162 Hz yielding 15 stable output bits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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