| Autor: |
H N Tran, E L H Mayes, B J Murdoch, D G McCulloch, D R McKenzie, M M M Bilek, A S Holland, J G Partridge |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Apr2017, Vol. 32 Issue 4, p1-1, 1p |
| Abstrakt: |
Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm−3 and mobilities of up to 13 cm2 V−1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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