Autor: |
Caldas, P. G., Silva, E. M., Prioli, R., Huang, J. Y., Juday, R., Fischer, A. M., Ponce, F. A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 2017, Vol. 121 Issue 12, p1-8, 8p, 3 Diagrams, 1 Chart, 5 Graphs |
Abstrakt: |
Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {1101}1123 and {1122}1123, followed by the basal {0002}1120. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {1101}1123 and {1122}1123 slip systems were observed at an average shear stress of 11GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the 1120 directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along 1120 directions were associated with the {0002}1120 slip. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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