Plasticity and optical properties of GaN under highly localized nanoindentation stress fields.

Autor: Caldas, P. G., Silva, E. M., Prioli, R., Huang, J. Y., Juday, R., Fischer, A. M., Ponce, F. A.
Předmět:
Zdroj: Journal of Applied Physics; 2017, Vol. 121 Issue 12, p1-8, 8p, 3 Diagrams, 1 Chart, 5 Graphs
Abstrakt: Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {1101}‹1123› and {1122}‹1123›, followed by the basal {0002}‹1120›. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {1101}‹1123› and {1122}‹1123› slip systems were observed at an average shear stress of 11GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the ‹1120› directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along ‹1120› directions were associated with the {0002}‹1120› slip. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index