| Autor: |
Mayes, K., Yasan, A., McClintock, R., Shiell, D., Darvish, S.R., Kung, P., Razeghi, M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/16/2004, Vol. 84 Issue 7, p1046-1048, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm×300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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