| Autor: |
Szkutnik, P. D., Aoukar, M., Todorova, V., Angélidès, L., Pelissier, B., Jourde, D., Michallon, P., Vallée, C., Noé, P. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 2017, Vol. 121 Issue 10, p1-11, 11p, 1 Black and White Photograph, 7 Graphs |
| Abstrakt: |
We investigated the deposition and the phase-change properties of In-doped GeTe thin films obtained by plasma enhanced metalorganic chemical vapor deposition and doped with indium using a solid delivery system. The sublimated indium precursor flow rate was calculated as a function of sublimation and deposition parameters. Indium related optical emission recorded by means of optical emission spectroscopy during deposition plasma allowed proposing the dissociation mechanisms of the [In(CH3)2N(CH3)2]2 solid precursor. In particular, using an Ar+H2+NH3 deposition plasma, sublimated indium molecules are completely dissociated and do not induce by-product contamination by addition of nitrogen or carbon in the films. X-ray photoelectron spectroscopy evidences the formation of In-Te bonds in amorphous as-deposited In-doped GeTe films. The formation of an InTe phase after 400°C annealing is also evidenced by means of X-ray diffraction analysis. The crystallization temperature Tx, deduced from monitoring of optical reflectivity of In-doped GeTe films with doping up to 11 at. % slightly varies as a function of the In dopant level with a decrease of Txdown to a minimum value for an In doping level of about 6-8 at. %. In this In doping range, the structure of crystallized In-GeTe films changes and is dominated by the presence of a crystalline In2Te3 phase. Finally, the Kissinger activation energy for crystallization Ea is showing to monotonically decrease as the indium content in the GeTe film is increased indicating a promising effect of In doping on crystallization speed in memory devices while keeping a good thermal stability for data retention. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
