| Autor: |
Wan, Xin, Baker, Oliver K., McCurdy, Michael W., Zhang, En Xia, Zafrani, Max, Wainwright, Simon P., Xu, Jun, Bo, Han Liang, Reed, Robert A., Fleetwood, Daniel M., Ma, T. P. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Jan2017, Vol. 64 Issue 1, part 1, p253-257, 5p |
| Abstrakt: |
Commercial enhancement mode GaN HEMTs are irradiated with low energy protons under different bias conditions. Negative threshold voltage ( Vth ) shifts are observed. In contrast, Vth shifts are positive under high voltage stress without proton irradiation. $C$ - V$ measurements with floating terminals are performed before and after irradiation. Both I$ - V$ and C$ - degradation. The floating terminal C-V measurements that are introduced in this study appear to be quite sensitive to traps in the AlGaN buffer layer, making this a potentially useful technique for future device characterization. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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