| Autor: |
Ambriz-Vargas, F., Kolhatkar, G., Thomas, R., Nouar, R., Sarkissian, A., Gomez-Yáñez, C., Gauthier, M. A., Ruediger, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/27/2017, Vol. 110 Issue 9, p1-5, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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