Band alignments of LaAlO films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios.

Autor:	Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng
Předmět:	THIN films SILICON films SUBSTRATES (Materials science) ATOMIC layer deposition PHOTOELECTRON spectroscopy
Zdroj:	Journal of Materials Science: Materials in Electronics; Mar2017, Vol. 28 Issue 6, p4702-4705, 4p
Abstrakt:	LaAlO films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and valence band offset increase synchronously with increasing Al composition, while the conduction band offset varies slightly. Furthermore, as the composition of Al increased, significant decrease in the gate leakage current for the metal-insulator-semiconductor capacitors using LaAlO films as insulators was observed due to the formation of larger bandgaps and valence band offsets. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink