| Autor: |
Pogue, Vanessa, Melkote, Shreyes N., Rounsaville, Brian, Danyluk, Steven |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2017, Vol. 121 Issue 8, p1-9, 9p, 6 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
This paper presents the results of an experiment designed to understand the effect of manufacturing-induced residual stress on photoluminescence (PL) in multi-crystalline silicon (mc-Si) wafers used for photovoltaic applications. The experiment relies on the use of near-infrared birefringence polariscopy and polarized micro-Raman spectroscopy to measure casting-induced residual stress present in mc-Si wafers. High temperature annealing was used to relieve the residual stress in the mc-Si wafers, and photoluminescence was used to evaluate the electrical performance to provide a correlation of residual stress to electrical activity. High temperature annealing produced a drastic improvement in photoluminescence. A decrease in the number of points of highest maximum shear stress correlated with an increase in photoluminescence. Additionally, a direct correlation was found between higher tensile residual stress and increased PL. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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