| Autor: |
BECHLAGHEM, Fatima Zohra, BOUAZZA, Ahlam GUEN, BOUAZZA, Benyounes, BOUCHACHIA, Badia |
| Předmět: |
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| Zdroj: |
Dielectric Materials & Applications; 2016, Vol. 1, p35-37, 3p |
| Abstrakt: |
In this paper a detailed simulation study is presented, the device characteristics of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) with different gate lengths sheets are comprehensively and systematically investigated. Based on a two-dimensional simulator of Atlas, the detailed calculations and studies including, carrier distributions, and DC and microwave performances are reported. Due to the use of InGaAs DC structure, good pinch-off and saturation characteristics, higher current drivability, larger and linear transconductance correlation has been analyzed for prediction of the impact on device performances. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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