Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems.

Autor:	Kozlov, A., Krasjukov, A., Krupkina, T., Chaplygin, Yu.
Předmět:	COMPUTER-aided design of integrated circuits SILICON-on-insulator technology MAGNETOSTATICS NANOSTRUCTURED materials COMPLEMENTARY metal oxide semiconductor design & construction MAGNETIC field effects
Zdroj:	Russian Microelectronics; Dec2016, Vol. 45 Issue 7, p522-527, 6p
Abstrakt:	The features of the technology computer aided design of integrated magnetosensitive elements in micro and nanosystems are considered. The results of the simulation and optimization of the constructive and technological parameters for magnetosensitive transistors, integrated Hall elements based on the standard CMOS technology, the Hall field sensor based on SOI-structures, and the characteristics of magnetic field concentrators are presented. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink