| Autor: |
Mynbaev, K., Bazhenov, N., Semakova, A., Mikhailova, M., Stoyanov, N., Kizhaev, S., Molchanov, S., Astakhova, A., Chernyaev, A., Lipsanen, H., Bougrov, V. |
| Předmět: |
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| Zdroj: |
Semiconductors; Feb2017, Vol. 51 Issue 2, p239-244, 6p |
| Abstrakt: |
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures ( T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant 'switch-on' of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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