| Autor: |
Buzynin, Yury, Drozdov, Michail, Yunin, Pavel, Shengurov, Vladimir, Zvonkov, Boris, Denisov, Sergey, Baidus, Nikolay, Pavlov, Dmitry, Buzynin, Alexander |
| Předmět: |
|
| Zdroj: |
AIP Advances; 2017, Vol. 7 Issue 1, p1-6, 6p, 1 Color Photograph, 2 Graphs |
| Abstrakt: |
We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
