| Autor: |
Susoma, Jannatul, Kim, Maria, Riikonen, Juha, Lipsanen, Harri, Lahtinen, Jouko |
| Předmět: |
|
| Zdroj: |
AIP Advances; 2017, Vol. 7 Issue 1, p1-8, 8p, 5 Graphs |
| Abstrakt: |
We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
