| Autor: |
Hanke, H., Schmidbauer, M., Köhler, R., Kirmse, H., Pristovsek, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2004, Vol. 95 Issue 4, p1736-1739, 4p, 1 Black and White Photograph, 1 Diagram, 2 Graphs |
| Abstrakt: |
In the present paper we report on structural investigations of fivefold In[sub 0.2]Ga[sub 0.8]As/GaAs superlattices which have been grown by means of metal organic chemical vapor deposition on vicinal GaAs(001) substrates. Cross-sectional transmission electron micrographs exhibit an initially flat and nonfaceted grooved surface, while step bunching occurs during subsequent growth stages with an inclined vertical inheritance approximately 45° off the (001) direction. A reconstructed sample cross section on the base of high resolution x-ray diffraction data qualitatively confirms the local morphology proved by transmission electron microscopy. Moreover, a line shape analysis of diffusely scattered intensity using Gauss profiles indicates a lateral short range ordering of step bunches. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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