| Autor: |
Mkhoyan, K. A., Silcox, J., Yu, Z., Schaff, W. J., Eastman, L. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2004, Vol. 95 Issue 4, p1843-1848, 6p, 1 Chart, 8 Graphs |
| Abstrakt: |
Calculations of the electronic energy levels and the distribution of the quasi-two-dimensional electron gas (Q2DEG) at the GaN/Al[sub x]Ga[sub 1-x]N interface that take into account the graded nature of the interface are presented in this article. Mapping of the interface using scanning transmission electron microscopy annular dark-field imaging, the changes in the N K-edge and the integrated intensity of the Al L[sub 2,3]-edge revealed that the interface can be up to 20 Å wide. Self-consistent calculations in the local density approximation estimate the sensitivity of the Q2DEG formed at the interface to various parameters, including the width of the interface, the concentration of bound charge, ambient temperature, and the geometrical sizes of the structure. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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