| Autor: |
Dreznera, Yariv, Greenzweig, Yuval, Tan, Shida, Livengood, Richard H., Raveh, Amir |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2017, Vol. 35 Issue 1, p1-10, 10p |
| Abstrakt: |
The predominant challenge of nanomachining by focused ion beam (FIB) is the generational down-scaling of minimum dimensions of cutting-edge technologies such as very large scale integration (VLSI) process technology. To keep pace with feature size reduction, the state of the art FIB beam profiles must also shrink proportionally. This requirement for FIB profile shrinking necessitates tests that analyze FIB profiles and their characteristics. With such tests in hand, the suitability for VLSI technology applications may be specified, developed, and qualified. The authors present herein various aspects and some fine details of the recently improved beam profile analysis, aka "teardrop" test. This test is based on obtaining real beam characteristics by analyzing amorphization traces produced by scanning the beam in question over a [001] Si single crystal sample, in a series of lines of increasing doses, followed by thorough analysis procedure. To derive the most accurate beam characteristics, the amorphized region widths are measured by transmission electron microscopy high resolution images. The analysis, relying on transport of ions in matter simulation, yields the transverse current density of a beam as a sum of two Gaussians and an exponential, and includes error estimates. To date, the authors have successfully analyzed several modern FIB columns. The authors believe that this methodological approach to beam profile analysis should provide useful data for both FIB column manufacturers and application platform customers. The method's advantages and limitations are discussed in detail. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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