| Autor: |
Lefevre, Aude, Ferreira, Delphine, Veillerot, Marc, Barnes, Jean-Paul, Parat, Guy, Czernohorsky, Malte, Lallemand, Florent |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2017, Vol. 35 Issue 1, p1-8, 8p |
| Abstrakt: |
Metal-insulator-metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee a good composition and thickness control. The impact of the deposition process and post-treatment condition on the MIM capacitor's breakdown voltage is studied and correlated with time of flight-secondary ion mass spectrometry (ToF-SIMS). Higher deposition temperature and thermal treatment of TiN and Al2O3 after deposition increase breakdown voltage and improve uniformity. ToF-SIMS demonstrates that Al2O3 higher deposition temperature or rapid thermal processing annealing reduce the diffusion of TiN in Al2O3 leading to thinner TiN/Al2O3 interface layers that influence breakdown voltage and uniformity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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