| Autor: |
Rückerl, Andreas, Huppmann, Sophia, Mandl, Martin, Katz, Simeon, Zeisel, Roland |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2017, Vol. 35 Issue 1, p1-5, 5p |
| Abstrakt: |
The degradation of atomic layer deposited aluminum oxide (ALD-Al2O3) at high temperature and high humidity was investigated. The intrinsic hydroxyl concentration of as-deposited ALD-Al2O3 was evaluated using a temperature dependent deposition study and its impact on degradation behavior was analyzed. In addition, the degradation of ALD-Al2O3 was monitored in situ using a plate capacitor with ALD-Al2O3 as dielectric. A model for the ALD-Al2O3 degradation mechanism was proposed based on the penetration of water molecules into the ALD-Al2O3 and on the formation of aluminum hydroxide. Two parameters, delay-time (time till a change in capacitance occurs) and wetting speed (speed of molecular water penetration into the ALD-Al2O3), were extracted from the capacitance measurements in order to evaluate the dependence of ALD-Al2O3 degradation on temperature and humidity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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