| Autor: |
김현준, 조수호, 오성재, 임원섭, 김지훈, 양영구 |
| Zdroj: |
Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; 12/1/2016, Vol. 27 Issue 12, p1069-1074, 6p |
| Abstrakt: |
This paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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