Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module.
| Autor: | Tiwari, S., Midtgard, O.-M., Undeland, T. M. |
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| Zdroj: | IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society; 2016, p1093-1098, 6p |
| Databáze: | Complementary Index |
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