Lasing characteristics of GaInAsP laser diode grown on directly bonded InP/Si substrate.
| Autor: | Nishiyama, Tetsuo, Matsumoto, Keiichi, Kishikawa, Jyunya, Onuki, Yuya, Kamada, Naoki, Shimomura, Kazuhiko |
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| Zdroj: | 2016 International Semiconductor Laser Conference (ISLC); 2016, p1-2, 2p |
| Databáze: | Complementary Index |
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