High current (650V–200A, 1200V–100A) single SiC diodes.
| Autor: | Hostetler, John L., O'Grady, Matt, Simon, William, Huang, Xing, Fox, Matt, Bhalla, Anup |
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| Zdroj: | 2016 IEEE 4th Workshop on Wide Bandgap Power Devices & Applications (WiPDA); 2016, p1-5, 5p |
| Databáze: | Complementary Index |
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