The simulation of resonant tunneling devices containing InAs quantum dots.

Autor: Song, J., Ning, W.G., Lu, H.D., Guo, F. M.
Zdroj: 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered & Molecular Systems (NEMS); 2016, p160-163, 4p
Databáze: Complementary Index