High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications.
| Autor: | Ridaoui, Mohamed, Fadgie-Djomkam, Alain-Bruno, Pastorek, Matej, Wichmann, Nicolas, Jaouad, Abdelatif, Maher, Hassan, Bollaert, Sylvain |
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| Zdroj: | 2016 11th European Microwave Integrated Circuits Conference (EuMIC); 2016, p173-176, 4p |
| Databáze: | Complementary Index |
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