Autor: |
Ramadhan, Surya, Alfaruq, Akhmad, Pramudita, Resa, Sulthoni, Muhammad Amin |
Předmět: |
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Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1788, p1-9, 9p, 3 Diagrams, 2 Charts, 13 Graphs |
Abstrakt: |
This paper present the result of simulation coupled series triple quantum dot (CSTQD) compared with an experiment that had been done recently. This Simulation shows the part of stability diagram of CSTQD as shown as in the experiment. The stability diagram from the simulation is almost given the similar result to the experiment. The target of the simulation and experiment are investigating the impact of coupling capacitor to the stability diagram. The experiment used various parameters of capacitor, and the simulation used the value of capacitor as the result of experiment. This simulation use SIMON (Single Electron Simulation), it's also shown the characteristics of coupled series triple quantum dot by giving various value of capacitor, resistance and potential difference at each gate and each drain. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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