Autor: |
Bortchagovsky, E. G., Vasin, A. V., Lytvyn, P. M., Tiagulskyi, S. I., Slobodian, A. M., Verovsky, I. N., Strelchuk, V. V., Stubrov, Yu., Nazarov, A. N. |
Předmět: |
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Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2016, Vol. 19 Issue 4, p328-333, 6p |
Abstrakt: |
Exploiting CVD technique for carbon deposition from C2H2+H2+N2 mixture, a graphene-like film synthesized directly on SiO2 surface of SiO2-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO2-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO2 layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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