| Autor: |
Shota Yano, Takashi Yamaha, Yosuke Shimura, Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima |
| Zdroj: |
Japanese Journal of Applied Physics; Jan2017, Vol. 56 Issue 1S, p1-1, 1p |
| Abstrakt: |
The solid phase crystallization of Si1−x−ySnxCy ternary alloy layers on an insulator has been examined. Amorphous Si1−x−ySnxCy layers with a Sn content of 0–20% and a C content of 0–10% were deposited on quartz substrates using a radio-frequency magnetron sputtering method and annealed at temperatures from 400 to 800 °C to induce the solid-phase crystallization. The crystalline properties of the Si1−x−ySnxCy layers and the influences of Sn and C introduction on their crystalline structures were investigated. It was found that Sn introduction effectively reduces the crystallization temperature of a Si1−x−ySnxCy layer to 400 °C, while a Si1−yCy binary alloy layer is hardly crystallized even at 800 °C. In addition, X-ray photoelectron spectroscopy measurement revealed that the Sn introduction effectively enhances the introduction of C atoms into substitutional sites in the ternary alloys. The substitutional C content in a polycrystalline Si1−x−ySnxCy layer was estimated to be as high as 7.2%, which exceeds the thermal equilibrium solid solubility of C in a Si matrix. The absorption spectra of Si1−x−ySnxCy ternary alloys were also investigated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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