Interband and intraband relaxation dynamics in InSb based quantum wells.

Autor: Bhowmick, M., Khodaparast, G. A., Mishima, T. D., Santos, M. B., Saha, D., Sanders, G., Stanton, C. J.
Předmět:
Zdroj: Journal of Applied Physics; 2016, Vol. 120 Issue 23, p235702-1-235702-7, 7p, 1 Diagram, 2 Charts, 6 Graphs
Abstrakt: We utilize pump/probe spectroscopy to determine the interband and intraband relaxation dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we observed several time scales for relaxation. One time scale τ3 ranging from 2 ps to 5 ps is due to the intraband relaxation dynamics. Here, both the emission of LO phonons (within the Γ valley) and carrier scattering between the X, L, and Γ valleys contribute to the relaxation. An observed longer relaxation time, τ2≈20 ps, is attributed to electron-hole recombination across the gap (the interband relaxation time). Finally, using a mid-infrared (MIR) degenerate pump/probe scheme, we observed a very fast relaxation time of ~1 ps, which is due to the saturation of the band-to-band absorption. Our results are important for developing concepts for InSb devices operating in the THz or MIR optical ranges with the endless need for faster response. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index